| PART |
Description |
Maker |
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
| ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard...
|
| EBOX565-500-FL-DC-6300U EBOX565-500-FL-DC-6100U |
Intel? Core?i5-6300U 2.4 GHz/i3-6100U 2.3 GHz/CeleronR 3955U 2.0 GHz (Skylake ULT SoC)
|
Axiomtek Co., Ltd.
|
| AD8341ACPZ-WP1 AD8341-EVAL CPZ-REEL72 |
1.5 GHz to 2.4 GHz RF Vector Modulator 1.5 GHz.4 GHz射频矢量调制
|
Analog Devices, Inc.
|
| PE82P2000 |
Analog Phase Shifter, 5 GHz to 18 GHz, With an Adjustable Phase of 40 Deg. Per GHz and SMA
|
Pasternack Enterprises,...
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
